The Resource Advanced high speed devices, editors, Michael S. Shur, Paul Maki, (electronic resource)

Advanced high speed devices, editors, Michael S. Shur, Paul Maki, (electronic resource)

Label
Advanced high speed devices
Title
Advanced high speed devices
Statement of responsibility
editors, Michael S. Shur, Paul Maki
Contributor
Provider
Subject
Genre
Language
eng
Summary
Advanced High Speed Devices covers five areas of advanced device technology : terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback
Member of
Cataloging source
LLB
Illustrations
  • illustrations
  • portraits
Index
no index present
LC call number
TK7874
LC item number
.I3226 2010eb
Literary form
non fiction
Nature of contents
  • standards specifications
  • bibliography
http://library.link/vocab/relatedWorkOrContributorDate
2008
http://library.link/vocab/relatedWorkOrContributorName
  • ebrary
  • Shur, Michael
  • Maki, Paul
  • IEEE/Cornell Conference on High Performance Devices
Series statement
Selected topics in electronics and systems
Series volume
v. 51
http://library.link/vocab/subjectName
  • Very high speed integrated circuits
  • Semiconductors
  • Transistors
  • Integrated circuits
  • TECHNOLOGY & ENGINEERING
  • TECHNOLOGY & ENGINEERING
Label
Advanced high speed devices, editors, Michael S. Shur, Paul Maki, (electronic resource)
Instantiates
Publication
Note
"This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Confernce on High Performance Devices."-- Preface
Bibliography note
Includes bibliographical references
Color
multicolored
Contents
Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] -- Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] -- GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis
Dimensions
unknown
Extent
1 online resource (x, 192 p.)
Form of item
electronic
Isbn
9789814287876
Lccn
2010455054
Other physical details
ill. (some col.)
Specific material designation
remote
System control number
  • (OCoLC)630164523
  • (OCoLC)ocn630164523
Label
Advanced high speed devices, editors, Michael S. Shur, Paul Maki, (electronic resource)
Publication
Note
"This volume contains the proceedings of the 2008 biennial Lester Eastman Conference (LEC), which was held on the Cornell University of Delaware campus on August 5-7, 2008. Conference was known as IEEE/Cornell University Confernce on High Performance Devices."-- Preface
Bibliography note
Includes bibliographical references
Color
multicolored
Contents
Simulation and experimental results on GaN based ultra-short planar negative differential conductivity diodes for THz power generation / B. Aslan, L.F. Eastman and Q. Diduck -- 5-terminal THz GaN based transistor with field- and space-charge control electrodes / G. Simin, M.S. Shur and R. Gaska -- Performance comparison of scaled III-V and Si ballistic nanowire MOSFETs / L. Wang ... [et al.] -- A room temperature ballistic deflection transistor for high performance applications / Q. Diduck, H. Irie and M. Margala -- Emission and intensity modulation of terahertz electromagnetic radiation utilizing 2-dimensional plasmons in dual-grating-gate HEMT's / T. Otsuji ... [et al.] -- Millimeter wave to terahertz in CMOS / K.K. O, S. Sankaran ... [et al.] -- The effects of increasing AlN mole fraction on the performance of AlGaN active regions containing nanometer scale compositionally inhomogeneities / A.V. Sampath ... [et al.] -- Surface acoustic wave propagation in GaN-On-sapphire under pulsed sub-band ultraviolet illumination / V.S. Chivukula ... [et al.] -- Solar-blind single-photon 4H-SiC avalanche photodiodes / A. Vert ... [et al.] -- Monte Carlo simulations of In[symbol]Ga[symbol]As MOSFETs at 0.5 V supply voltage for high-performance CMOS / J.S. Ayubi-Moak, K. Kalna and A. Asenov -- The first 70nm 6-inch GaAs PHEMT MMIC process / H. Karimy ... [et al.] -- High-performance 50-nm metamorphic high electron-mobility transistors with high breakdown voltages / D. Xu ... [et al.] -- MBE growth and characterization of Mg-doped III-nitrides on sapphire / X. Chen ... [et al.] -- Performance of MOSFETs on reactive-ion-etched GaN surfaces / K. Tang, W. Huang, T.P. Chow -- High current density/high voltage AlGaN/GaN HFETs on sapphire / J. Shi, M. Pophristic and L.F. Eastman -- InAlN/GaN MOS-HEMT with thermally grown oxide / M. Alomari ... [et al.] -- GaN transistors for power switching and millimeter-wave applications / T. Ueda ... [et al.] -- 4-nm AlN barrier all binary HFET with SiNx gate dielectric / T. Zimmermann ... [et al.] -- Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate / H. Naik, K. Tang and T.P. Chow -- Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET / H. Naik, Y. Wang and T.P. Chow -- Packaging and wide-pulse switching of 4 mm x 4 mm silicon carbide GTOs / H. O'Brien and M.G. Koebke -- Bi-directional scalable solid-state circuit breakers for hybrid-electric vehicles / D.P. Urciuoli and V. Veliadis
Dimensions
unknown
Extent
1 online resource (x, 192 p.)
Form of item
electronic
Isbn
9789814287876
Lccn
2010455054
Other physical details
ill. (some col.)
Specific material designation
remote
System control number
  • (OCoLC)630164523
  • (OCoLC)ocn630164523

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