The Resource Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, by Iraj Sadegh Amiri, Mahdiar Ghadiry, (electronic resource)

Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, by Iraj Sadegh Amiri, Mahdiar Ghadiry, (electronic resource)

Label
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Title
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Statement of responsibility
by Iraj Sadegh Amiri, Mahdiar Ghadiry
Creator
Contributor
Author
Provider
Subject
Language
eng
Summary
This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors
Member of
http://library.link/vocab/creatorName
Amiri, Iraj Sadegh
Image bit depth
0
LC call number
T174.7
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
  • Ghadiry, Mahdiar.
  • SpringerLink
Series statement
SpringerBriefs in Applied Sciences and Technology,
http://library.link/vocab/subjectName
  • Engineering
  • Electronic circuits
  • Nanotechnology
  • Engineering
  • Nanotechnology and Microengineering
  • Electronic Circuits and Devices
  • Nanotechnology
Label
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, by Iraj Sadegh Amiri, Mahdiar Ghadiry, (electronic resource)
Instantiates
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene
Dimensions
unknown
Extent
IX, 86 p. 55 illus., 16 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9789811065507
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-981-10-6550-7
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-981-10-6550-7
Label
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor, by Iraj Sadegh Amiri, Mahdiar Ghadiry, (electronic resource)
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction on Scaling Issues of Conventional Semiconductors -- Basic Concept of Field Effect Transistors -- Methodology for Modelling of Surface Potemntial, Ionization and Breakdown of Graphene Field Effect Transistors -- Results and Discussion on Ionization and Breakdown of Grapehene Field Efffect Transistor -- Conclusion and Futureworks on High Voltage Application of Graphene
Dimensions
unknown
Extent
IX, 86 p. 55 illus., 16 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9789811065507
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-981-10-6550-7
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-981-10-6550-7

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