Coverart for item
The Resource Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications, edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, (electronic resource)

Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications, edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, (electronic resource)

Label
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications
Title
Ferroelectric-Gate Field Effect Transistor Memories
Title remainder
Device Physics and Applications
Statement of responsibility
edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon
Contributor
Editor
Provider
Subject
Language
eng
Summary
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films
Member of
Image bit depth
0
LC call number
TK7867-7867.5
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
  • Park, Byung-Eun.
  • Ishiwara, Hiroshi.
  • Okuyama, Masanori.
  • Sakai, Shigeki.
  • Yoon, Sung-Min.
  • SpringerLink
Series statement
Topics in Applied Physics,
Series volume
131
http://library.link/vocab/subjectName
  • Physics
  • Surfaces (Physics)
  • Interfaces (Physical sciences)
  • Thin films
  • Electronic circuits
  • Electronics
  • Microelectronics
  • Materials
  • Physics
  • Electronic Circuits and Devices
  • Electronics and Microelectronics, Instrumentation
  • Surfaces and Interfaces, Thin Films
  • Circuits and Systems
  • Surface and Interface Science, Thin Films
Label
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications, edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, (electronic resource)
Instantiates
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Inorganic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Organic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Ferroelectric-gate Field Effect Transistors with flexible substrates -- Applications and Future Prospects
Dimensions
unknown
Extent
XVIII, 347 p. 254 illus., 150 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9789402408416
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-94-024-0841-6
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-94-024-0841-6
Label
Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications, edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon, (electronic resource)
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Inorganic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Practical Characteristics of Organic Ferroelectric-gate FETs -- Si-Based Ferroelectric-gate Field Effect Transistors -- Thin film-Based Ferroelectric-gate Field Effect Transistors -- Ferroelectric-gate Field Effect Transistors with flexible substrates -- Applications and Future Prospects
Dimensions
unknown
Extent
XVIII, 347 p. 254 illus., 150 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9789402408416
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-94-024-0841-6
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-94-024-0841-6

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