The Resource Fundamentals of Power Semiconductor Devices, by B. Jayant Baliga, (electronic resource)

Fundamentals of Power Semiconductor Devices, by B. Jayant Baliga, (electronic resource)

Label
Fundamentals of Power Semiconductor Devices
Title
Fundamentals of Power Semiconductor Devices
Statement of responsibility
by B. Jayant Baliga
Creator
Contributor
Author
Author
Provider
Subject
Language
eng
Summary
This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry. Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. Provides comprehensive textbook for courses on physics of power semiconductor devices; Includes extensive analytical formulations for design and analysis of device structures; Uses numerical simulation examples in every section to elucidate the operating physics and validate the models; Analyzes device performance attributes that enable development of real, energy-efficient products; Includes numerous exercises in each chapter to reinforce concepts introduced; Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions
http://library.link/vocab/creatorName
Baliga, B. Jayant
http://bibfra.me/vocab/relation/httpidlocgovvocabularyrelatorsaut
6k906S9O0G4
Image bit depth
0
LC call number
TK7888.4
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
SpringerLink
http://library.link/vocab/subjectName
  • Systems engineering
  • Electronics
  • Circuits and Systems
  • Electronic Circuits and Devices
  • Electronics and Microelectronics, Instrumentation
Label
Fundamentals of Power Semiconductor Devices, by B. Jayant Baliga, (electronic resource)
Instantiates
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis
Dimensions
unknown
Edition
2nd ed. 2019.
Extent
XXXII, 1086 p. 838 illus., 559 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319939889
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-3-319-93988-9
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-3-319-93988-9
Label
Fundamentals of Power Semiconductor Devices, by B. Jayant Baliga, (electronic resource)
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction -- Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Insulated Gate Bipolar Thyristors -- Synopsis
Dimensions
unknown
Edition
2nd ed. 2019.
Extent
XXXII, 1086 p. 838 illus., 559 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319939889
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-3-319-93988-9
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-3-319-93988-9

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