The Resource GaAs high-speed devices : physics, technology, and circuit applications, C.Y. Chang, Francis Kai

GaAs high-speed devices : physics, technology, and circuit applications, C.Y. Chang, Francis Kai

Label
GaAs high-speed devices : physics, technology, and circuit applications
Title
GaAs high-speed devices
Title remainder
physics, technology, and circuit applications
Statement of responsibility
C.Y. Chang, Francis Kai
Creator
Contributor
Subject
Language
eng
Cataloging source
DLC
http://library.link/vocab/creatorDate
1937-
http://library.link/vocab/creatorName
Chang, C. Y.
Illustrations
illustrations
Index
index present
LC call number
TK7871.15.G3
LC item number
C47 1994
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/relatedWorkOrContributorDate
1956-
http://library.link/vocab/relatedWorkOrContributorName
Kai, Francis
http://library.link/vocab/subjectName
  • Gallium arsenide semiconductors
  • Integrated circuits
  • Gallium arsenide semiconductors
  • Integrated circuits
  • Circuits intégrés à très grande vitesse
  • Semiconducteurs à l'arséniure de gallium
  • Circuits intégrés
  • Galliumarsenid
  • Integrierte Schaltung
Label
GaAs high-speed devices : physics, technology, and circuit applications, C.Y. Chang, Francis Kai
Instantiates
Publication
Note
"A Wiley Interscience publication."
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Development of gallium arsenide devices and integrated circuits -- Gallium arsenide crystal structure and growth -- Epitaxial growth processes -- Process techniques -- Lithography -- Device-related physics and principles -- Metal-to-GaAs contacts -- GaAs metal - semiconductor field-effect transistor -- High electron-mobility transistor (HEMT) -- Heterojunction bipolar transistors -- Resonant-tunneling transistors -- Hot-electron transistors and novel devices -- GaAs FET amplifiers and monolithic microwave integrated circuits -- GaAs digital integrated circuits -- High-speed photonic devices
Dimensions
27 cm
Extent
xiv, 612 pages
Isbn
9780471856412
Lccn
92020705
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Other physical details
illustrations
System control number
  • (OCoLC)26132514
  • (OCoLC)ocm26132514
Label
GaAs high-speed devices : physics, technology, and circuit applications, C.Y. Chang, Francis Kai
Publication
Note
"A Wiley Interscience publication."
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier category code
nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Development of gallium arsenide devices and integrated circuits -- Gallium arsenide crystal structure and growth -- Epitaxial growth processes -- Process techniques -- Lithography -- Device-related physics and principles -- Metal-to-GaAs contacts -- GaAs metal - semiconductor field-effect transistor -- High electron-mobility transistor (HEMT) -- Heterojunction bipolar transistors -- Resonant-tunneling transistors -- Hot-electron transistors and novel devices -- GaAs FET amplifiers and monolithic microwave integrated circuits -- GaAs digital integrated circuits -- High-speed photonic devices
Dimensions
27 cm
Extent
xiv, 612 pages
Isbn
9780471856412
Lccn
92020705
Media category
unmediated
Media MARC source
rdamedia
Media type code
n
Other physical details
illustrations
System control number
  • (OCoLC)26132514
  • (OCoLC)ocm26132514

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