The Resource High Mobility and Quantum Well Transistors : Design and TCAD Simulation, by Geert Hellings, Kristin De Meyer, (electronic resource)

High Mobility and Quantum Well Transistors : Design and TCAD Simulation, by Geert Hellings, Kristin De Meyer, (electronic resource)

Label
High Mobility and Quantum Well Transistors : Design and TCAD Simulation
Title
High Mobility and Quantum Well Transistors
Title remainder
Design and TCAD Simulation
Statement of responsibility
by Geert Hellings, Kristin De Meyer
Creator
Contributor
Author
Provider
Subject
Language
eng
Summary
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes
Member of
http://library.link/vocab/creatorName
Hellings, Geert
Image bit depth
0
LC call number
TK7867-7867.5
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
  • De Meyer, Kristin.
  • SpringerLink
Series statement
Springer Series in Advanced Microelectronics,
Series volume
42
http://library.link/vocab/subjectName
  • Physics
  • Engineering
  • Systems engineering
  • Optical materials
  • Physics
  • Electronic Circuits and Devices
  • Circuits and Systems
  • Optical and Electronic Materials
  • Semiconductors
  • Nanotechnology and Microengineering
Label
High Mobility and Quantum Well Transistors : Design and TCAD Simulation, by Geert Hellings, Kristin De Meyer, (electronic resource)
Instantiates
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
List of Abbreviations and Symbols -- 1 Introduction -- 2 S/D Junctions in Ge: experimental -- 3 TCAD Simulation and Modeling of Ion Implants in Germanium -- 4 Electrical TCAD Simulations and Modeling in Germanium -- 5 Investigation of Quantum Well Transistors for Scaled Technologies -- 6 Implant-Free Quantum Well FETs: Experimental investigation -- 7 Conclusions Future Work and Outlook -- Bibliography -- List of Publications
Dimensions
unknown
Extent
XVIII, 140 p. 77 illus.
File format
multiple file formats
Form of item
electronic
Isbn
9789400763401
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-94-007-6340-1
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-94-007-6340-1
Label
High Mobility and Quantum Well Transistors : Design and TCAD Simulation, by Geert Hellings, Kristin De Meyer, (electronic resource)
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
List of Abbreviations and Symbols -- 1 Introduction -- 2 S/D Junctions in Ge: experimental -- 3 TCAD Simulation and Modeling of Ion Implants in Germanium -- 4 Electrical TCAD Simulations and Modeling in Germanium -- 5 Investigation of Quantum Well Transistors for Scaled Technologies -- 6 Implant-Free Quantum Well FETs: Experimental investigation -- 7 Conclusions Future Work and Outlook -- Bibliography -- List of Publications
Dimensions
unknown
Extent
XVIII, 140 p. 77 illus.
File format
multiple file formats
Form of item
electronic
Isbn
9789400763401
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-94-007-6340-1
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-94-007-6340-1

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