The Resource Power GaN Devices : Materials, Applications and Reliability, edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, (electronic resource)

Power GaN Devices : Materials, Applications and Reliability, edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, (electronic resource)

Label
Power GaN Devices : Materials, Applications and Reliability
Title
Power GaN Devices
Title remainder
Materials, Applications and Reliability
Statement of responsibility
edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
Contributor
Editor
Provider
Subject
Language
eng
Summary
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation
Member of
Image bit depth
0
LC call number
TK7881.15
Literary form
non fiction
http://library.link/vocab/relatedWorkOrContributorName
  • Meneghini, Matteo.
  • Meneghesso, Gaudenzio.
  • Zanoni, Enrico.
  • SpringerLink
Series statement
Power Electronics and Power Systems,
http://library.link/vocab/subjectName
  • Engineering
  • Energy systems
  • Semiconductors
  • Electronics
  • Microelectronics
  • Power electronics
  • Optical materials
  • Electronic materials
  • Engineering
  • Power Electronics, Electrical Machines and Networks
  • Semiconductors
  • Optical and Electronic Materials
  • Energy Systems
  • Electronics and Microelectronics, Instrumentation
Label
Power GaN Devices : Materials, Applications and Reliability, edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, (electronic resource)
Instantiates
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu
Dimensions
unknown
Extent
X, 380 p. 306 illus., 266 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319431994
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-3-319-43199-4
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-3-319-43199-4
Label
Power GaN Devices : Materials, Applications and Reliability, edited by Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, (electronic resource)
Publication
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
1 Properties and advantages of gallium nitride; Daisuke Ueda -- 2 Substrate issues and epitaxial growth; Stacia Keller -- 3 GaN-on-Silicon CMOS compatible process; Denis Marcon -- 4 Lateral GaN-based power devices; Umesh Mishra -- 5 GaN-based vertical transistors; Srabanti Chowduri -- 6 GaN-based nanowire transistors; Tomas Palacios -- 7 Deep level characterization: electrical and optical methods; Robert Kaplar -- 8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi -- 9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni -- 10 Cascode configuration for normally-off devices; Primit Parikh -- 11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda -- 12 Fluorine implanted E-mode transistors; Kevin Chen -- 13 Drift effects in GaN HV power transistors; Joachim Wuerfl -- 14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee -- 15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu
Dimensions
unknown
Extent
X, 380 p. 306 illus., 266 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319431994
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other control number
10.1007/978-3-319-43199-4
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote
System control number
(DE-He213)978-3-319-43199-4

Library Locations

  • African Studies LibraryBorrow it
    771 Commonwealth Avenue, 6th Floor, Boston, MA, 02215, US
    42.350723 -71.108227
  • Alumni Medical LibraryBorrow it
    72 East Concord Street, Boston, MA, 02118, US
    42.336388 -71.072393
  • Astronomy LibraryBorrow it
    725 Commonwealth Avenue, 6th Floor, Boston, MA, 02445, US
    42.350259 -71.105717
  • Fineman and Pappas Law LibrariesBorrow it
    765 Commonwealth Avenue, Boston, MA, 02215, US
    42.350979 -71.107023
  • Frederick S. Pardee Management LibraryBorrow it
    595 Commonwealth Avenue, Boston, MA, 02215, US
    42.349626 -71.099547
  • Howard Gotlieb Archival Research CenterBorrow it
    771 Commonwealth Avenue, 5th Floor, Boston, MA, 02215, US
    42.350723 -71.108227
  • Mugar Memorial LibraryBorrow it
    771 Commonwealth Avenue, Boston, MA, 02215, US
    42.350723 -71.108227
  • Music LibraryBorrow it
    771 Commonwealth Avenue, 2nd Floor, Boston, MA, 02215, US
    42.350723 -71.108227
  • Pikering Educational Resources LibraryBorrow it
    2 Silber Way, Boston, MA, 02215, US
    42.349804 -71.101425
  • School of Theology LibraryBorrow it
    745 Commonwealth Avenue, 2nd Floor, Boston, MA, 02215, US
    42.350494 -71.107235
  • Science & Engineering LibraryBorrow it
    38 Cummington Mall, Boston, MA, 02215, US
    42.348472 -71.102257
  • Stone Science LibraryBorrow it
    675 Commonwealth Avenue, Boston, MA, 02445, US
    42.350103 -71.103784
Processing Feedback ...