The Resource Silicon-germanium strained layers and heterostructures, S.C. Jain, M. Willander, (electronic resource)

Silicon-germanium strained layers and heterostructures, S.C. Jain, M. Willander, (electronic resource)

Label
Silicon-germanium strained layers and heterostructures
Title
Silicon-germanium strained layers and heterostructures
Statement of responsibility
S.C. Jain, M. Willander
Contributor
Subject
Genre
Language
  • eng
  • eng
Summary
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particu
Member of
Is Subseries of
Cataloging source
MiAaPQ
Dewey number
621.38152
Illustrations
illustrations
Index
index present
Language note
English
LC call number
QC610.9
LC item number
.W54 2003
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
http://library.link/vocab/relatedWorkOrContributorDate
1926-
http://library.link/vocab/relatedWorkOrContributorName
  • Jain, S. C.
  • Willander, M
Series statement
Semiconductors and semimetals
Series volume
v. 74
http://library.link/vocab/subjectName
  • Compound semiconductors
  • Layer structure (Solids)
  • Heterostructures
  • Germanium
  • Silicon
Label
Silicon-germanium strained layers and heterostructures, S.C. Jain, M. Willander, (electronic resource)
Instantiates
Publication
Note
Previous ed.: published as Germanium-silicon strained layers and heterostuctures by Suresh C. Jain. Boston: Academic, 1994
Bibliography note
Includes bibliographical references (p. 243-280) and index
Carrier category
online resource
Carrier category code
  • cr
Content category
text
Content type code
  • txt
Contents
  • Front Cover; Silicon-Germanium Strained Layers and Heterostructures: Semiconductors and Semimetals; Copyright Page; Contents; Preface to the first edition; Preface to the second edition; Chapter 1. Introduction; 1.1 Development of SiGe technology; 1.2 Commercial production of SiGe devices; 1.3 Landmarks in the development of SiGe devices; Chapter 2. Strain, stability, reliability and growth; 2.1 Strain and dislocations; 2.2 Strain and dislocation energies; 2.3 Critical thickness; 2.4 Stability of strained layers; 2.5 Stresses in quantum structures; 2.6 Poly-SiGe and poly-SiGeC films
  • 2.7 Growth of strain relaxed layersChapter 3. Mechanism of strain relaxation; 3.1 Introduction; 3.2 Propagation of dislocations; 3.3 Nucleation, multiplication and blocking; 3.4 Strain relaxation; 3.5 Summary; Chapter 4. Strain, growth, and TED in SiGeC layers; 4.1 Introduction; 4.2 Strain and Growth of Si1-x-yGexCy layers; 4.3 Thermal diffusion; 4.4 TED and its suppression by carbon; 4.5 Modelling of TED in Si1-x-yGexCy layers; 4.6 Conclusion and summary; Chapter 5. Bandstructure and related properties; 5.1 Effect of strain on bandstructure; 5.2 Effective Density of States and Fermi energy
  • 5.3 Bandgap narrowing due to heavy doping5.4 Mobility; 5.5 Electrical properties of SiGeC films; 5.6 Optical properties of unstrained alloys; 5.7 Optical studies of strained layers; 5.8 Optical studies of quantum wires and dots; 5.9 Superlattices (SLs); Chapter 6. Heterostructure Bipolar Transistors; 6.1 Introduction; 6.2 Design; 6.3 Technology; 6.4 DC performance of SiGe HBTs; 6.5 AC characteristics of the HBTs; 6.6 Optimization of BVceo, ft and fmax; 6.7 HBTs with SiGeC base-layers; 6.8 Noise; 6.9 Circuit applications; 6.10 Summary; Chapter 7. FETs and other devices
  • 7.1 Ge channel MOS transistors7.2 Strained layer p-channel MOSFETs; 7.3 Strained layer n-channel MOSFETs; 7.4 Modulation doped Field Effect Transistors; 7.5 Strained-layer MOSFETs on insulator; 7.6 High-k gate-insulators; 7.7 MOSFETs containing Si1-x-yGexCy alloys; 7.8 Ultra-shallow junctions; 7.9 Application of SiGe to ultrashallow junctions; 7.10 Resonant tunnelling diodes; 7.11 Photodetectors, waveguide switch and laser; Bibliography; Index; Contents of Volumes
Dimensions
unknown
Edition
2nd ed..
Extent
1 online resource (325 p.)
Form of item
online
Isbn
9786611119423
Media category
computer
Media type code
  • c
Specific material designation
remote
System control number
  • (EBL)305655
  • (OCoLC)808626129
  • (SSID)ssj0000246016
  • (PQKBManifestationID)11221302
  • (PQKBTitleCode)TC0000246016
  • (PQKBWorkID)10180164
  • (PQKB)10022887
  • (MiAaPQ)EBC305655
  • (EXLCZ)991000000000363516
Label
Silicon-germanium strained layers and heterostructures, S.C. Jain, M. Willander, (electronic resource)
Publication
Note
Previous ed.: published as Germanium-silicon strained layers and heterostuctures by Suresh C. Jain. Boston: Academic, 1994
Bibliography note
Includes bibliographical references (p. 243-280) and index
Carrier category
online resource
Carrier category code
  • cr
Content category
text
Content type code
  • txt
Contents
  • Front Cover; Silicon-Germanium Strained Layers and Heterostructures: Semiconductors and Semimetals; Copyright Page; Contents; Preface to the first edition; Preface to the second edition; Chapter 1. Introduction; 1.1 Development of SiGe technology; 1.2 Commercial production of SiGe devices; 1.3 Landmarks in the development of SiGe devices; Chapter 2. Strain, stability, reliability and growth; 2.1 Strain and dislocations; 2.2 Strain and dislocation energies; 2.3 Critical thickness; 2.4 Stability of strained layers; 2.5 Stresses in quantum structures; 2.6 Poly-SiGe and poly-SiGeC films
  • 2.7 Growth of strain relaxed layersChapter 3. Mechanism of strain relaxation; 3.1 Introduction; 3.2 Propagation of dislocations; 3.3 Nucleation, multiplication and blocking; 3.4 Strain relaxation; 3.5 Summary; Chapter 4. Strain, growth, and TED in SiGeC layers; 4.1 Introduction; 4.2 Strain and Growth of Si1-x-yGexCy layers; 4.3 Thermal diffusion; 4.4 TED and its suppression by carbon; 4.5 Modelling of TED in Si1-x-yGexCy layers; 4.6 Conclusion and summary; Chapter 5. Bandstructure and related properties; 5.1 Effect of strain on bandstructure; 5.2 Effective Density of States and Fermi energy
  • 5.3 Bandgap narrowing due to heavy doping5.4 Mobility; 5.5 Electrical properties of SiGeC films; 5.6 Optical properties of unstrained alloys; 5.7 Optical studies of strained layers; 5.8 Optical studies of quantum wires and dots; 5.9 Superlattices (SLs); Chapter 6. Heterostructure Bipolar Transistors; 6.1 Introduction; 6.2 Design; 6.3 Technology; 6.4 DC performance of SiGe HBTs; 6.5 AC characteristics of the HBTs; 6.6 Optimization of BVceo, ft and fmax; 6.7 HBTs with SiGeC base-layers; 6.8 Noise; 6.9 Circuit applications; 6.10 Summary; Chapter 7. FETs and other devices
  • 7.1 Ge channel MOS transistors7.2 Strained layer p-channel MOSFETs; 7.3 Strained layer n-channel MOSFETs; 7.4 Modulation doped Field Effect Transistors; 7.5 Strained-layer MOSFETs on insulator; 7.6 High-k gate-insulators; 7.7 MOSFETs containing Si1-x-yGexCy alloys; 7.8 Ultra-shallow junctions; 7.9 Application of SiGe to ultrashallow junctions; 7.10 Resonant tunnelling diodes; 7.11 Photodetectors, waveguide switch and laser; Bibliography; Index; Contents of Volumes
Dimensions
unknown
Edition
2nd ed..
Extent
1 online resource (325 p.)
Form of item
online
Isbn
9786611119423
Media category
computer
Media type code
  • c
Specific material designation
remote
System control number
  • (EBL)305655
  • (OCoLC)808626129
  • (SSID)ssj0000246016
  • (PQKBManifestationID)11221302
  • (PQKBTitleCode)TC0000246016
  • (PQKBWorkID)10180164
  • (PQKB)10022887
  • (MiAaPQ)EBC305655
  • (EXLCZ)991000000000363516

Library Locations

  • African Studies LibraryBorrow it
    771 Commonwealth Avenue, 6th Floor, Boston, MA, 02215, US
    42.350723 -71.108227
  • Alumni Medical LibraryBorrow it
    72 East Concord Street, Boston, MA, 02118, US
    42.336388 -71.072393
  • Astronomy LibraryBorrow it
    725 Commonwealth Avenue, 6th Floor, Boston, MA, 02445, US
    42.350259 -71.105717
  • Fineman and Pappas Law LibrariesBorrow it
    765 Commonwealth Avenue, Boston, MA, 02215, US
    42.350979 -71.107023
  • Frederick S. Pardee Management LibraryBorrow it
    595 Commonwealth Avenue, Boston, MA, 02215, US
    42.349626 -71.099547
  • Howard Gotlieb Archival Research CenterBorrow it
    771 Commonwealth Avenue, 5th Floor, Boston, MA, 02215, US
    42.350723 -71.108227
  • Mugar Memorial LibraryBorrow it
    771 Commonwealth Avenue, Boston, MA, 02215, US
    42.350723 -71.108227
  • Music LibraryBorrow it
    771 Commonwealth Avenue, 2nd Floor, Boston, MA, 02215, US
    42.350723 -71.108227
  • Pikering Educational Resources LibraryBorrow it
    2 Silber Way, Boston, MA, 02215, US
    42.349804 -71.101425
  • School of Theology LibraryBorrow it
    745 Commonwealth Avenue, 2nd Floor, Boston, MA, 02215, US
    42.350494 -71.107235
  • Science & Engineering LibraryBorrow it
    38 Cummington Mall, Boston, MA, 02215, US
    42.348472 -71.102257
  • Stone Science LibraryBorrow it
    675 Commonwealth Avenue, Boston, MA, 02445, US
    42.350103 -71.103784
Processing Feedback ...