The Resource VLSI fabrication principles : silicon and gallium arsenide, Sorab K. Ghandhi

VLSI fabrication principles : silicon and gallium arsenide, Sorab K. Ghandhi

Label
VLSI fabrication principles : silicon and gallium arsenide
Title
VLSI fabrication principles
Title remainder
silicon and gallium arsenide
Statement of responsibility
Sorab K. Ghandhi
Creator
Subject
Language
eng
Summary
  • Like its celebrated predecessor, this Second Edition of VLSI Fabrication Principles adheres to the basic philosophy that there is a common core to the behavior and process technology of all semiconductor materials, and that looking at this subject from a unified point of view is the best way to stay up-to-date over the long term
  • By presenting a unified treatment of both elemental and compound semiconductor technologies, and by emphasizing the underlying principles that govern their behavior, this book gives students and practicing professionals the tools with which to stay up-to-date with the rapid changes in VLSI fabrication technology
  • All chapters have been modified and expanded to reflect a growing understanding of VLSI fabrication processes and shifts in the direction of process technology. The chapter on Epitaxy, for instance, has been greatly expanded and a new section added on molecular beam epitaxy, while the section on liquid phase epitaxy has been shortened because of its diminished role in process technology. New material on dry etching techniques has been incorporated in the chapter on Etching and Cleaning
  • In some places, the order of presentation has been changed to fine-tune the book's effectiveness as a senior and graduate-level teaching text. Fabrication principles covered include those for such circuits as CMOS, BIPOLAR, BICMOS, FET, and more
  • . VLSI Fabrication Principles will equip students to cope, not only with state-of-the-art techniques, but with future developments as well. It will continue to be a valuable asset long after course work is done. For electrical engineers, physicists, and materials scientists, it will aid in understanding the limitations of fabrication processes used to make modern, solid-state and optoelectronic devices and circuits
Related
Cataloging source
DLC
http://library.link/vocab/creatorDate
1928-
http://library.link/vocab/creatorName
Ghandhi, Sorab Khushro
Illustrations
illustrations
Index
index present
LC call number
TK7874
LC item number
.G473 1994
Literary form
non fiction
Nature of contents
bibliography
http://library.link/vocab/subjectName
  • Integrated circuits
  • Silicon
  • Gallium arsenide
  • Gallium arsenide
  • Integrated circuits
  • Silicon
  • Semiconducteurs à l'arséniure de gallium
  • Circuits intégrés à très grande échelle
  • Silicones
  • Arséniure de gallium
  • Fertigung
  • VLSI
Label
VLSI fabrication principles : silicon and gallium arsenide, Sorab K. Ghandhi
Instantiates
Publication
Note
"A Wiley-Interscience publication."
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier category code
  • nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • 4.10. Evaluation Techniques for Diffused Layers -- 5. Epitaxy. 5.1. General Considerations. 5.2. Molecular Beam Epitaxy. 5.3. Vapor-Phase Epitaxy. 5.4. VPE Processes for Silicon. 5.5. VPE Processes for Gallium Arsenide. 5.6. Liquid-Phase Epitaxy. 5.7. LPE Systems. 5.8. Heteroepitaxy. 5.9. Evaluation of Epitaxial Layers -- 6. Ion Implantation. 6.1. Penetration Range. 6.2. Implantation Damage. 6.3. Annealing. 6.4. Ion Implantation Systems. 6.5. Process Considerations. 6.6. High-Energy Implants. 6.7. High-Current Implants. 6.8. Application to Silicon. 6.9. Application to Gallium Arsenide -- 7. Native Films. 7.1. Thermal Oxidation of Silicon. 7.2. Thermal Nitridation of Silicon. 7.3. Thermal Oxidation of Gallium Arsenide. 7.4. Anodic Oxidation. 7.5. Plasma Processes. 7.6. Evaluation of Native Films -- 8. Deposited Films. 8.1. Film Deposition Methods. 8.2. Film Characteristics. 8.3. Films for Protection and Masking. 8.4. Films for Doping. 8.5. Films for Interconnections. 8.6. Films for Ohmic Contacts
  • 8.7. Films for Schottky Diodes -- 9. Etching and Cleaning. 9.1. Wet Chemical Etching. 9.2. Dry Physical Etching. 9.3. Dry Chemical Etching. 9.4. Reactive Ion Etching. 9.5. Chemically Assisted Ion Beam Techniques. 9.6. Etching-Induced Damage. 9.7. Cleaning -- 10. Lithographic Processes. 10.1. Photoreactive Materials. 10.2. Pattern Generation and Mask-Making. 10.3. Pattern Transfer. 10.4. Advanced Techniques. 10.5. Problem Areas -- 11. Device and Circuit Fabrication. 11.1. Isolation. 11.2. Self-Alignment. 11.3. Local Oxidation. 11.4. Planarization. 11.5. Metallization. 11.6. Gettering. 11.7. MOS-Based Silicon Microcircuits. 11.8. BJT-Based Silicon Microcircuits. 11.9. Gallium Arsenide Microcircuits -- Appendix: The Mathematics of Diffusion. A.1. Solutions for a Constant Diffusion Coefficient. A.2. Solution for a Time-Dependent Diffusion Coefficient. A.3. Solution for Concentration-Dependent Diffusion Coefficients. A.4. Determination of the Diffusion Constant
Dimensions
25 cm
Edition
2nd ed.
Extent
xxiv, 834 pages
Isbn
9780471580058
Lccn
93040716
Media category
unmediated
Media MARC source
rdamedia
Media type code
  • n
Other physical details
illustrations
System control number
  • (OCoLC)29219815
  • (OCoLC)ocm29219815
Label
VLSI fabrication principles : silicon and gallium arsenide, Sorab K. Ghandhi
Publication
Note
"A Wiley-Interscience publication."
Bibliography note
Includes bibliographical references and index
Carrier category
volume
Carrier category code
  • nc
Carrier MARC source
rdacarrier
Content category
text
Content type code
  • txt
Content type MARC source
rdacontent
Contents
  • 4.10. Evaluation Techniques for Diffused Layers -- 5. Epitaxy. 5.1. General Considerations. 5.2. Molecular Beam Epitaxy. 5.3. Vapor-Phase Epitaxy. 5.4. VPE Processes for Silicon. 5.5. VPE Processes for Gallium Arsenide. 5.6. Liquid-Phase Epitaxy. 5.7. LPE Systems. 5.8. Heteroepitaxy. 5.9. Evaluation of Epitaxial Layers -- 6. Ion Implantation. 6.1. Penetration Range. 6.2. Implantation Damage. 6.3. Annealing. 6.4. Ion Implantation Systems. 6.5. Process Considerations. 6.6. High-Energy Implants. 6.7. High-Current Implants. 6.8. Application to Silicon. 6.9. Application to Gallium Arsenide -- 7. Native Films. 7.1. Thermal Oxidation of Silicon. 7.2. Thermal Nitridation of Silicon. 7.3. Thermal Oxidation of Gallium Arsenide. 7.4. Anodic Oxidation. 7.5. Plasma Processes. 7.6. Evaluation of Native Films -- 8. Deposited Films. 8.1. Film Deposition Methods. 8.2. Film Characteristics. 8.3. Films for Protection and Masking. 8.4. Films for Doping. 8.5. Films for Interconnections. 8.6. Films for Ohmic Contacts
  • 8.7. Films for Schottky Diodes -- 9. Etching and Cleaning. 9.1. Wet Chemical Etching. 9.2. Dry Physical Etching. 9.3. Dry Chemical Etching. 9.4. Reactive Ion Etching. 9.5. Chemically Assisted Ion Beam Techniques. 9.6. Etching-Induced Damage. 9.7. Cleaning -- 10. Lithographic Processes. 10.1. Photoreactive Materials. 10.2. Pattern Generation and Mask-Making. 10.3. Pattern Transfer. 10.4. Advanced Techniques. 10.5. Problem Areas -- 11. Device and Circuit Fabrication. 11.1. Isolation. 11.2. Self-Alignment. 11.3. Local Oxidation. 11.4. Planarization. 11.5. Metallization. 11.6. Gettering. 11.7. MOS-Based Silicon Microcircuits. 11.8. BJT-Based Silicon Microcircuits. 11.9. Gallium Arsenide Microcircuits -- Appendix: The Mathematics of Diffusion. A.1. Solutions for a Constant Diffusion Coefficient. A.2. Solution for a Time-Dependent Diffusion Coefficient. A.3. Solution for Concentration-Dependent Diffusion Coefficients. A.4. Determination of the Diffusion Constant
Dimensions
25 cm
Edition
2nd ed.
Extent
xxiv, 834 pages
Isbn
9780471580058
Lccn
93040716
Media category
unmediated
Media MARC source
rdamedia
Media type code
  • n
Other physical details
illustrations
System control number
  • (OCoLC)29219815
  • (OCoLC)ocm29219815

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